ace 3400b n - channel enhancement mode mosfet ver 1.2 1 description the ACE3400Bbm+ uses advanced trench technology to provide excellent r ds(on) and low gate charge low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. feature s ? v ds 3 0 v ? r ds(on) @v gs = 10 v , i ds =5. 2 a, typ 24m ? r ds(on) @v gs = 4.5 v , i ds =5a, typ 27m ? fast switching speed ? low threshold voltage (0.8v) makes this device ideal for portable equipment absolute maximum ratings parameter symbol max unit drain - source voltage v dss 3 0 v gate - source voltage v gss 12 v drain current continuous (note 1) i d 5 .2 a pulsed (note 2) i d m 3 0 power dissipation (note 1) p d 1 w operating and storage junction temperature range t j ,t stg - 55~ +150 packaging type sot - 23 - 3 l 3 1 2 sot - 23 - 3 l description function 1 g gate 2 s source 3 d d rain
ace 3400b n - cha nnel enhancement mode mosfet ver 1.2 2 ordering i nformation ace 3400 b xx + h electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250a 30 34 v zero gate voltage drain current i dss v ds =24v, v gs =0v 1 a gate threshold voltage v gs(th) v gs =v ds , i ds =250a 0.7 0 . 8 1 v gate leakage current i gss v gs = 1 2 v, v ds =0v 100 na drain - source on - state resistance r ds(on) v gs =10v, i d =5. 2 a 2 4 2 8 m v gs =4.5v, i d =5a 2 7 3 3 v gs = 2 .5v, i d = 4 a 3 9 5 2 forward transconductance g fs v d s =5v, i d =5a 1 0 15 s diode forward voltage v sd i sd =1a, v gs =0v 0.7 1 1 v turn - on delay time t d(on) v d s = 1 5 v , r l = 2 . 3 , v g s = 1 0 v , r g e n = 3 1 8 ns turn - off delay time t d(off) 7 0 input capacitance ciss v gs =0v, v ds =15v, f=1.0mhz 6 9 7 pf output capacitance coss 2 5 9 reverse transfer capacitance crss 3 0 8 note : 1. dut is mounted on a 1in 2 fr - 4 board with 2oz. copper in a still air environment at 25 2. repetitive rating, pulse width limited by junction temperature. b m : sot - 23 - 3 l pb - free halo gen - free
ace 3400b n - cha nnel enhancement mode mosfet ver 1.2 3 typical performance characteristics
ace 3400b n - cha nnel enhancement mode mosfet ver 1.2 4 typical performance characteristics
ace 3400b n - cha nnel enhancement mode mosfet ver 1.2 5 packing information so t - 23 - 3 l
ace 3400b n - cha nnel enhancement mode mosfet ver 1.2 6 notes ace does not assume any responsibility for use as critical componen ts in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the label ing, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or s ystem, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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